BAS16L,315 NXP Semiconductors, BAS16L,315 Datasheet - Page 7

DIODE SW 100V 215MA H-S SOD882

BAS16L,315

Manufacturer Part Number
BAS16L,315
Description
DIODE SW 100V 215MA H-S SOD882
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS16L,315

Package / Case
SOD-882
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
500nA @ 80V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
1.5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
215 mA
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4859-2
934057247315
BAS16L T/R
BAS16L T/R
BAS16L,315

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS16L,315
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BAS16_SER_5
Product data sheet
Fig 1.
Fig 3.
(mA)
( A)
I
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
Rev. 05 — 25 August 2008
1.4
Fig 2.
Fig 4.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diodes
10
BAS16 series
8
2
10
12
© NXP B.V. 2008. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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