BAS16L,315 NXP Semiconductors, BAS16L,315 Datasheet - Page 8

• Manufacturer Part Number: BAS16L,315
• Description: DIODE SW 100V 215MA H-S SOD882
• Manufacturer: NXP Semiconductors

Specifications of BAS16L,315

• Package / Case: SOD-882
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 215 mA
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4859-2; 934057247315; BAS16L T/R; BAS16L T/R; BAS16L,315

NXP Semiconductors
8. Test information
9. Package outline
BAS16_SER_5
Product data sheet
Fig 5.
Fig 6.
Fig 7.
2.5
2.1
Dimensions in mm
(1) I
R
V = V
S
1.4
1.2
R
S
= 50
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time t
Forward recovery voltage test circuit and waveforms
Package outline BAS16 (SOT23/TO-236AB)
R
R
= 50
I
= 1 mA
I
F
1
R
S
1 k
D.U.T.
3.0
2.8
1.9
3
450
I
F
r
D.U.T.
= 0.35 ns
OSCILLOSCOPE
R
2
i
0.48
0.38
= 50
0.45
0.15
OSCILLOSCOPE
r
r
mga881
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
SAMPLING
R
i
= 50
Rev. 05 — 25 August 2008
1.1
0.9
0.15
0.09
04-11-04
I
V
R
10 %
t
r
Fig 8.
t
10 %
r
90 %
Dimensions in mm
input signal
90 %
input signal
3.6
3.4
t
p
Package outline BAS16H (SOD123F)
t
p
2.7
2.5
p
p
= 100 ns; duty cycle
100 ns; duty cycle
0.70
0.55
1.7
1.5
t
High-speed switching diodes
t
BAS16 series
1
2
V
I
F
V FR
0.55
0.35
output signal
= 0.05
output signal
0.005
© NXP B.V. 2008. All rights reserved.
t rr
1.2
1.0
0.25
0.10
mga882
(1)
04-11-29
t
t
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