STGF10NB60SD STMicroelectronics, STGF10NB60SD Datasheet - Page 10
STGF10NB60SD
Manufacturer Part Number
STGF10NB60SD
Description
MOSFET N-CHAN 10A 600V TO-220FP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGP10NB60SD.pdf
(15 pages)
Specifications of STGF10NB60SD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
25W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
20A
Collector Emitter Voltage Vces
1.8V
Power Dissipation Pd
25W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGF10NB60SD
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
4
10/15
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 11860 Rev 2
STGF10NB60SD, STGP10NB60SD
®