STGF10NB60SD STMicroelectronics, STGF10NB60SD Datasheet - Page 7

• Manufacturer Part Number: STGF10NB60SD
• Description: MOSFET N-CHAN 10A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Pd: 25W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGF10NB60SD, STGP10NB60SD
Figure 8.
Figure 10. Capacitance variations
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized breakdown voltage vs
temperature
Doc ID 11860 Rev 2
Figure 9.
Figure 11. Switching losses vs temperature
Gate charge vs gate-emitter voltage
current
Electrical characteristics
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