STGF10NB60SD STMicroelectronics, STGF10NB60SD Datasheet - Page 12

• Manufacturer Part Number: STGF10NB60SD
• Description: MOSFET N-CHAN 10A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Pd: 25W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Package mechanical data
12/15
Table 10.
Dim.
L20
L30
∅
D1
H1
b1
e1
J1
L1
D
Q
A
E
F
b
c
e
L
P
TO-220 type A mechanical data
15.25
Min.
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
Doc ID 11860 Rev 2
16.40
28.90
Typ.
1.27
mm
STGF10NB60SD, STGP10NB60SD
15.75
10.40
Max.
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14