STP2NK60Z STMicroelectronics, STP2NK60Z Datasheet - Page 2

• Manufacturer Part Number: STP2NK60Z
• Description: MOSFET N-CH 600V 1.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4377-5

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
V
Rthj-case
Rthj-amb
Rthj-lead
Symbol
Symbol
dv/dt (1)
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
T
AR
ISO
T
DS
GS
stg
AS
GSO
D
D
1.4A, di/dt
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C= 100pF, R=1.5k )
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
Gate source
Breakdown Voltage
200A/µs, V
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
Parameter
Parameter
D
C
GS
I
= I
gs
= 25°C
GS
j
, T
= ± 1 mA (Open Drain)
= 20 k )
max)
AR
j
Test Conditions
= 0)
, V
T
DD
JMAX.
C
C
= 25°C
= 100°C
= 50 V)
TO-220/IPAK
TO-220 /
IPAK
2.77
0.77
0.36
100
Min.
1.4
5.6
45
30
--
300
Max Value
-55 to 150
TO-220FP
Value
1500
TO-92
± 30
600
600
0.025
4.5
1.4
90
0.25
6.25
100
Typ.
0.4
1.6
--
3
TO-220FP
0.77 (*)
1.4 (*)
5.6 (*)
TO-92
2500
0.16
Max.
120
260
20
40
--
W/°C
°C/W
°C/W
°C/W
Unit
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
V