STP2NK60Z STMicroelectronics, STP2NK60Z Datasheet - Page 3

• Manufacturer Part Number: STP2NK60Z
• Description: MOSFET N-CH 600V 1.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4377-5

ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
oss eq.
t
t
I
I
I
C
SD
I
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
I
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
r
(1)
g
rr
rr
(1)
(2)
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
(3)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
= 0)
CASE
I
I
V
(see test circuit, Figure 23)
I
V
(see test circuit, Figure 23)
SD
SD
SD
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure
22)
V
V
(see, Figure 24)
DD
DD
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
G
= 1mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 1.5 A, V
= 1.3 A, di/dt = 100 A/µs
= 1.3 A, di/dt = 100 A/µs
= 4.7
= 25V, T
= 25V, T
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 25V, f = 1 MHz, V
= 0V, V
= 300 V, I
= 480V, I
= 10V
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
GS
DS
I
j
j
D
D
D
GS
GS
= 25°C
= 150°C
D
= 0.7 A
D
= 0.7 A
= 50 µA
= 0
= 0V to 480V
= 1.5 A,
= 0
= 0.65 A,
= 10 V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
600
3
Typ.
3.75
Typ.
Typ.
170
250
550
300
690
7.2
7.7
1.7
4.4
4.6
27
30
30
22
55
1
5
8
4
Max.
Max.
Max.
±10
4.5
1.5
1.6
50
10
1
8
6
Unit
Unit
Unit
µC
µC
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
3/16
V
V
S
A
A
V
A
A