STP2NK60Z STMicroelectronics, STP2NK60Z Datasheet - Page 5

• Manufacturer Part Number: STP2NK60Z
• Description: MOSFET N-CH 600V 1.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4377-5

Figure 9: Safe Operating Area For TO-220FP
Figure 10: Output Characteristics
Figure 11: Transconductance
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 12: Thermal Impedance For TO-220FP
Figure 13: Transfer Characteristics
Figure 14: Gate Charge vs Gate-source Voltage
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