STP80NF03L-04 STMicroelectronics, STP80NF03L-04 Datasheet - Page 2

• Manufacturer Part Number: STP80NF03L-04
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF03L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2676-5

STP80NF03L
ABSOLUTE MAXIMUM RATINGS
(#) Current Limited by Package.
( ) Pulse width limited by safe operating area.
(1) I
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF/ON
2/8
Rthj-case
Rthj-amb
V
dv/dt (1)
Symbol
Symbol
Symbol
SD
R
V
I
(BR)DSS
V
DM
I
I
P
I
I
V
DS(on)
V
D
D
E
GS(th)
T
I
DSS
GSS
DGR
TOT
AR
T
T
stg
DS
GS
AS
(#)
(#)
j
80A, di/dt 240 A/µs, V
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery Voltage Slope
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose Typ
Parameter
j
DS
= 25 °C, I
DD
= 0)
= 24V ; T
GS
= 0)
D
C
GS
= I
= 25°C
j
Parameter
Parameter
GS
j
= 20 k )
max)
AR
T
I
V
V
V
V
V
V
JMAX.
= 0)
D
, V
DS
DS
GS
DS
GS
GS
= 250 µA, V
CASE
DD
C
C
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10 V, I
= 4.5 V, I
= 25°C
= 100°C
= 20 V)
Test Conditions
GS
= 25 °C UNLESS OTHERWISE SPECIFIED)
, I
D
D
D
GS
= 250 µA
= 40 A
= 40 A
= 0
C
= 125 °C
Min.
30
1
Max Value
–65 to 175
Value
± 20
62.5
0.0045
320
300
175
300
2.0
2.0
0.5
2.3
0.004
30
30
80
80
40
Typ.
1.5
0.0045
0.0065
Max.
±100
2.5
10
1
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
µA
µA
nA
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
J