STP80NF03L-04 STMicroelectronics, STP80NF03L-04 Datasheet - Page 3

• Manufacturer Part Number: STP80NF03L-04
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF03L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2676-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
t
I
C
SD
C
r(Voff)
C
d(on)
Q
Q
fs
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
oss
t
t
t
iss
rss
rr
gd
r
gs
c
f
f
(1)
g
rr
(2)
(1)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Off-Voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
V
V
R
(Resistive Load, Figure 3)
V
V
V
R
(Resistive Load, Figure 3)
V
R
(Inductive Load, Figure 5)
V
I
I
V
(see test circuit, Figure 5)
DS
DD
DD
GS
DD
clamp
SD
SD
G
G
G
DS
DD
= 4.7
= 4.7
= 4.7
=15 V
= 15 V, I
= 24V, I
= 4.5V
= 15 V, I
= 80 A, V
= 80 A, di/dt = 100 A/µs,
= 25V, f = 1 MHz, V
= 20 V, T
= 24 V, I
Test Conditions
Test Conditions
Test Conditions
Test Conditions
,
V
I
V
V
D
D
GS
D
D
GS
GS
= 15 A
GS
= 80A,
j
= 40 A
= 40 A,
D
= 150°C
= 4.5 V
= 4.5V
= 4.5V
= 80 A,
= 0
GS
= 0
Min.
Min.
Min.
Min.
5500
1670
Typ.
Typ.
Typ.
Typ.
0.15
290
270
110
125
125
50
30
85
23
40
95
75
75
4
STP80NF03L
Max.
Max.
Max.
Max.
110
320
1.5
80
Unit
Unit
Unit
Unit
µC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
A
A
V
A
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