STW26NM60N STMicroelectronics, STW26NM60N Datasheet - Page 12

• Manufacturer Part Number: STW26NM60N
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9066-5

Package mechanical data
12/17
Dim.
D
G
F
F
L
L
L
L
L
L
D
G
H
A
B
E
F
2
3
4
5
6
7
a i
1
2
1
A
B
H
M
0
0
1
1
4
2
1
4
2
2
2
9
2
1
4 .
7 .
1 .
1 .
9 .
8
5
9
3
. n i
4 .
5 .
5 .
4 .
8 .
9 .
STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N
0
Dia
6 .
9 .
5
5
5
5
5
TO-220FP mechanical data
Doc ID 15642 Rev 2
L6
L2
L7
L 3
mm
T
L5
1
y
6
. p
F1
D
L4
F2
7012510_Rev_J
F
E
G1
M
2
1
1
3
1
1
4
2
0
1
5
2
3
9
3
7 .
7 .
0
0
0
6
a
1
6 .
7 .
7 .
5 .
2 .
7 .
6 .
3 .
2 .
4 .
6 .
6 .
4 .
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5
0
G