STW26NM60N STMicroelectronics, STW26NM60N Datasheet - Page 7

• Manufacturer Part Number: STW26NM60N
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9066-5

STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
G
V
(S)
(V)
0.5
6.5
4.5
2.5
8.5
12
10
GS
FS
6
4
2
8
0
0
0
V
Output characteristics
DS
10
5
20
T
J
=-50°C
V
10
DD
30
I
D
=480V
=20A
40
15
50
T
T
J
=150°C
J
=25°C
20
60
V
GS
Doc ID 15642 Rev 2
I
Q
D
AM03320v1
AM03318v1
(A)
g
(nC)
Figure 9.
Figure 11. Static drain-source on resistance
R
10000
0.16
1000
0.15
0.14
0.13
0.12
DS(on)
0.11
100
(pF)
(Ω)
0.1
10
C
1
0.1
0
Transfer characteristics
5
1
V
I
GS
D
=10A
10
=10V
Electrical characteristics
10
15
100
20
V
I
D
DS
(A)
AM03317v1
AM03319v1
(V)
Ciss
Crss
Coss
7/17