STW26NM60N STMicroelectronics, STW26NM60N Datasheet - Page 4

• Manufacturer Part Number: STW26NM60N
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9066-5

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
Q
R
oss eq.
oss
rss
iss
gs
gd
g
g
= 25 °C unless otherwise specified)
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N
Doc ID 15642 Rev 2
I
V
V
V
V
V
V
V
V
V
V
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DD
= 1 mA, V
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V,
Test conditions
Test conditions
GS
, I
DS
GS
D
D
= 0 to 480 V
= 250 µA
D
= 10 A
= 0
= 20 A,
Min. Typ.
600
Min.
2
-
-
-
-
0.135 0.165
1800
Typ.
115
310
1.1
8.5
2.8
3
60
30
oss
when V
Max. Unit
Max. Unit
0.1
10
1
4
-
-
-
-
DS
µA
µA
µA
Ω
nC
nC
nC
V
V
pF
pF
pF
pF
Ω