STW26NM60N STMicroelectronics, STW26NM60N Datasheet - Page 8

• Manufacturer Part Number: STW26NM60N
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9066-5

Electrical characteristics
8/17
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
(norm)
V
GS(th)
1.0
0.8
(V)
0.7
V
0.9
1.1
0.6
0.4
0.2
0.8
1.2
1.0
SD
-50
0
0
vs temperature
characteristics
-25
10
0
20
T
25
J
=-50°C
50
30
75
40
100
T
T
J
J
=150°C
=25°C
50
T
STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N
J
I
(°C)
SD
Doc ID 15642 Rev 2
AM03324v1
AM03321v1
(A)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
DS(on)
0.99
0.95
1.01
0.97
0.93
1.07
1.05
1.03
DSS
1.3
0.9
0.5
1.7
2.1
-50
-50
temperature
-25
-25
0
0
25
25
VDSS
50
50
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM03322v1
AM03323v1