PMN50XP,165 NXP Semiconductors, PMN50XP,165 Datasheet

MOSFET P-CH 20V 4.8A 6TSOP

PMN50XP,165

Manufacturer Part Number
PMN50XP,165
Description
MOSFET P-CH 20V 4.8A 6TSOP
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMN50XP,165

Package / Case
SC-74-6
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
1020pF @ 20V
Power - Max
2.2W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.8 A
Power Dissipation
2200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058528165
PMN50XP /T2
PMN50XP /T2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMN50XP,165
Manufacturer:
VISHAY
Quantity:
9
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package. This product is designed and qualified for use in computing,
communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
Dynamic characteristics
Q
Static characteristics
R
D
DS
GD
DSon
PMN50XP
P-channel TrenchMOS extremely low level FET
Rev. 02 — 2 October 2007
Low on-state losses
Battery management
Load Switching
drain-source voltage
drain current
gate-drain charge
drain-source on-state
resistance
Quick reference
Conditions
T
V
see
V
V
see
V
T
j
j
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
Figure 9
= -4.5 V; T
= -4.5 V; I
= -10 V; T
= -4.5 V; I
j
and
and
≤ 150 °C
D
j
D
sp
= 25 °C;
Figure 7
= -4.7 A;
= -2.8 A;
= 25 °C;
3
10
Low threshold voltage
Battery powered portable equipment
Low power DC to DC converters
and
8
Min
-
-
-
-
Product data sheet
Typ
-
-
1.3
48
Max
-20
-4.8
-
60
Unit
V
A
nC

Related parts for PMN50XP,165

PMN50XP,165 Summary of contents

Page 1

PMN50XP P-channel TrenchMOS extremely low level FET Rev. 02 — 2 October 2007 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET plastic package. This product is designed and qualified for use ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PMN50XP TSOP6 plastic surface-mounted package (TSOP6); 6 leads 4. Limiting values Table 4. ...

Page 3

... NXP Semiconductors 120 I der (%) 100 × 100 % der 25°C ) Fig 1. Normalized continuous drain current as a function of solder point temperature − (A) Limit R DSon −10 −1 −1 −10 −1 − ° single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance th(j-sp) from junction to solder point th(j-sp) δ = 0.5 (K/W) 0.2 10 0.1 0.05 0.02 single pulse Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 6. Characteristics Table 6. Characteristics ...

Page 5

... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance iss C output capacitance oss C reverse transfer rss capacitance t turn-on delay time d(on) ...

Page 6

... NXP Semiconductors -1.2 V GS(th) max (V) -0.8 typ min -0 Fig 5. Gate-source threshold voltage as a function of junction temperature 150 - DSon (mΩ) 120 - °C j Fig 7. Drain-source on-state resistance as a function of drain current; typical values PMN50XP_2 Product data sheet P-channel TrenchMOS extremely low level FET 03ar95 − ...

Page 7

... NXP Semiconductors - -4 ° ° Fig 9. Gate-source voltage as a function of gate charge; typical values Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMN50XP_2 Product data sheet P-channel TrenchMOS extremely low level FET 03aq09 (nC) G Fig 10. Gate charge waveform definitions ...

Page 8

... NXP Semiconductors 7. Package outline Plastic surface-mounted package (TSOP6); 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 0.40 1.1 0.26 mm 0.013 0.25 0.10 0.9 OUTLINE VERSION IEC SOT457 Fig 12. Package outline SOT457 (TSOP6) PMN50XP_2 Product data sheet P-channel TrenchMOS extremely low level FET ...

Page 9

... Document ID Release date PMN50XP_2 20071002 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the company name where appropriate. PMN50XP_1 20060123 PMN50XP_2 Product data sheet P-channel TrenchMOS extremely low level FET ...

Page 10

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 11

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Legal information 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 9 ...

Related keywords