PMN50XP,165 NXP Semiconductors, PMN50XP,165 Datasheet - Page 7

• Manufacturer Part Number: PMN50XP,165
• Description: MOSFET P-CH 20V 4.8A 6TSOP
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN50XP,165

• Package / Case: SC-74-6
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058528165; PMN50XP /T2; PMN50XP /T2

NXP Semiconductors
PMN50XP_2
Product data sheet
Fig 9. Gate-source voltage as a function of gate
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
V
(V)
GS
-5
-4
-3
-2
-1
0
V
charge; typical values
I
D
GS
0
= 4.7 A; T
I
T
V
D
j
DS
= 0 V; f = 1 M H z
= -4.7 A
= 25 °C
= -10 V
j
= 25 °C; V
4
DS
= 10 V
(pF)
8
C
10
10
10
10
−10
4
3
2
Q
G
−1
(nC)
03aq09
12
Rev. 02 — 2 October 2007
−1
Fig 10. Gate charge waveform definitions
−10
P-channel TrenchMOS extremely low level FET
V
V
C
C
C
DS
V
V
V
GS(pl)
001aae335
iss
oss
rss
DS
GS(th)
GS
(V)
−10
Q
2
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMN50XP
© NXP B.V. 2007. All rights reserved.
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