PMN50XP,165 NXP Semiconductors, PMN50XP,165 Datasheet - Page 8

• Manufacturer Part Number: PMN50XP,165
• Description: MOSFET P-CH 20V 4.8A 6TSOP
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN50XP,165

• Package / Case: SC-74-6
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058528165; PMN50XP /T2; PMN50XP /T2

NXP Semiconductors
7. Package outline
Fig 12. Package outline SOT457 (TSOP6)
PMN50XP_2
Product data sheet
Plastic surface-mounted package (TSOP6); 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
Rev. 02 — 2 October 2007
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
JEITA
scale
1
0.6
0.2
L p
A
P-channel TrenchMOS extremely low level FET
0.33
0.23
Q
A 1
2 mm
0.2
v
0.2
w
H E
E
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
c
A
PMN50XP
© NXP B.V. 2007. All rights reserved.
ISSUE DATE
05-11-07
06-03-16
X
v
M
SOT457
A
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