STP3NK80Z STMicroelectronics, STP3NK80Z Datasheet - Page 16

• Manufacturer Part Number: STP3NK80Z
• Description: MOSFET N-CH 800V 2.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP3NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 4.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4379-5

Packing mechanical data
5
16/18
Packing mechanical data
DIM.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
R
E
F
TAPE MECHANICAL DATA
All dimensions are in millimeters
MIN.
10.4
1.65
2.55
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
DPAK FOOTPRINT
mm
MAX.
10.6
12.1
1.85
2.75
16.3
1.6
7.6
4.1
8.1
2.1
7
0.267 0.275
0.409 0.417
0.059 0.063
0.059
0.065 0.073
0.291 0.299
0.100 0.108
0.153 0.161
0.311 0.319
0.075 0.082
1.574
0.618
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
0.476
0.641
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
2500
MIN.
12.8
20.2
16.4
1.5
50
mm
MAX.
13.2
18.4
22.4
330
BULK QTY
0.059
0.504 0.520
0.795
0.645 0.724
1.968
MIN.
2500
inch
12.992
MAX.
0.881