STP9NK65Z STMicroelectronics, STP9NK65Z Datasheet - Page 3

• Manufacturer Part Number: STP9NK65Z
• Description: MOSFET N-CH 650V 6.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK65Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 6.4A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1145pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP9NK65Z - STP9NK65ZFP
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2.
3.
Table 3.
Table 4.
V
Rthj-case
Rthj-amb
Symbol
Symbol
dv/dt
Symbol
ESD(G-S)
I
Pulse width limited by safe operating area
I
DM
P
V
SD
V
V
T
E
I
I
I
TOT
T
ISO
T
AR
GS
DS
stg
D
D
AS
j
l
(2)
≤ 6.4 A, di/dt ≤ 200 A/µs, V
(3)
Avalanche characteristics
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
j
=25 °C, I
DD
Parameter
Parameter
Parameter
D
C
=I
≤ 80%V
= 25 °C
AR
GS
, V
= 0)
DD
(BR)DSS
C
C
=50 V)
= 25 °C
= 100 °C
TO-220
TO-220
25.6
125
6.4
4
1
1
-
-55 to 150
-55 to 150
Value
Value
Value
4000
± 30
62.5
200
650
300
6.4
4.5
TO-220FP
TO-220FP
Electrical ratings
25.6
6.4
2500
0.24
4
4.2
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
mJ
°C
°C
°C
W
A
V
A
A
A
V
V
V
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