MOSFET N-CH 30V 16A 8-SOIC

IRF7805Z

Manufacturer Part NumberIRF7805Z
DescriptionMOSFET N-CH 30V 16A 8-SOIC
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7805Z datasheet
 

Specifications of IRF7805Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs6.8 mOhm @ 16A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C16AVgs(th) (max) @ Id2.25V @ 250µA
Gate Charge (qg) @ Vgs27nC @ 4.5VInput Capacitance (ciss) @ Vds2080pF @ 15V
Power - Max2.5WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF7805Z  
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Applications
High Frequency Point-of-Load
l
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Benefits
Very Low R
at 4.5V V
l
DS(on)
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
l
and Current
100% Tested for R
l
G
Absolute Maximum Ratings
Parameter
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
Pulsed Drain Current
I
DM
Power Dissipation
P
@T
= 25°C
D
A
Power Dissipation
P
@T
= 70°C
D
A
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
R
θJL
Junction-to-Ambient
R
θJA
Notes  through
are on page 10
www.irf.com
V
DSS
30V 6.8m:@V
1
S
2
S
GS
3
S
4
G
Top View
@ 10V
GS
@ 10V
GS
f
f
Typ.
g
–––
fg
–––
IRF7805Z
HEXFET Power MOSFET
R
max
Qg (typ.)
DS(on)
= 10V
18nC
GS
A
A
8
D
7
D
6
D
5
D
SO-8
Max.
Units
30
V
± 20
16
12
A
120
2.5
W
1.6
0.02
W/°C
-55 to + 150
°C
Max.
Units
20
°C/W
50
1
6/30/05

IRF7805Z Summary of contents

  • Page 1

    ... Junction-to-Ambient R θJA Notes  through are on page 10 … www.irf.com V DSS 30V 6.8m:@ Top View @ 10V GS @ 10V Typ. g ––– fg ––– IRF7805Z HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 18nC SO-8 Max. Units 30 V ± 120 2.5 W 1.6 0.02 W/° ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.1 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

  • Page 4

    0V MHZ C iss = SHORTED C rss = oss = Ciss 1000 Coss Crss 100 1 ...

  • Page 5

    Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL ...

  • Page 6

    Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V V GS 0.01 Ω Fig 13a. Unclamped Inductive Test Circuit ...

  • Page 7

    D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 15. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 16. Gate ...

  • Page 8

    Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

  • Page 9

    SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...

  • Page 10

    SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  ...