STW30N65M5 STMicroelectronics, STW30N65M5 Datasheet - Page 11

• Manufacturer Part Number: STW30N65M5
• Description: MOSFET N-CH 650V 22A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.139 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 22 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 64 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10655-5; STW30N65M5

STB/F/I/P/W30N65M5
Dim
L20
L30
∅P
D1
H1
b1
e1
L1
J1
D
Q
A
b
E
e
F
L
c
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
Doc ID 15331 Rev 2
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
Package mechanical data
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62
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