STW30N65M5 STMicroelectronics, STW30N65M5 Datasheet - Page 6

• Manufacturer Part Number: STW30N65M5
• Description: MOSFET N-CH 650V 22A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.139 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 22 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 64 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10655-5; STW30N65M5

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK, I²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Tj=150°C
Tc=25°C
Sinlge
pulse
Sinlge
pulse
Tj=150°C
Tc=25°C
Sinlge
pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 15331 Rev 2
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM05462v1
AM05463v1
AM05464v1
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK, I²PAK
Thermal impedance for TO-220FP
Thermal impedance for TO-247
STB/F/I/P/W30N65M5