STW30N65M5 STMicroelectronics, STW30N65M5 Datasheet - Page 12

• Manufacturer Part Number: STW30N65M5
• Description: MOSFET N-CH 650V 22A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.139 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 22 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 64 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10655-5; STW30N65M5

Package mechanical data
12/18
Dim.
D
G
F
F
L
L
L
L
L
L
D
G
H
A
B
E
F
2
3
4
5
6
7
a i
1
2
1
A
B
H
M
0
0
1
1
4
2
1
4
2
2
2
9
2
1
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7 .
1 .
1 .
9 .
8
5
9
3
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4 .
5 .
5 .
4 .
8 .
9 .
0
Dia
6 .
9 .
5
5
5
5
5
Doc ID 15331 Rev 2
TO-220FP mechanical data
L6
L2
L7
L 3
mm
T
L5
1
y
6
. p
F1
D
L4
F2
STB/F/I/P/W30N65M5
7012510_Rev_J
F
E
G1
M
2
1
1
3
1
1
4
2
0
1
5
2
3
9
3
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7 .
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6
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7 .
7 .
5 .
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6 .
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