STW30N65M5 STMicroelectronics, STW30N65M5 Datasheet - Page 15

• Manufacturer Part Number: STW30N65M5
• Description: MOSFET N-CH 650V 22A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.139 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 22 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 64 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10655-5; STW30N65M5

STB/F/I/P/W30N65M5
Dim
A1
D1
E1
V2
b2
c2
e1
J1
L1
L2
A
D
E
H
R
b
c
e
L
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
Doc ID 15331 Rev 2
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
Package mechanical data
0.016
inch
Typ
0.1
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max
8°
15/18