BSO130P03S Infineon Technologies, BSO130P03S Datasheet

no-image

BSO130P03S

Manufacturer Part Number
BSO130P03S
Description
MOSFET P-CH 30V 9.2A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO130P03S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 11.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
2.2V @ 140µA
Gate Charge (qg) @ Vgs
81nC @ 10V
Input Capacitance (ciss) @ Vds
3520pF @ 25V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
13 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 11.3 A
Power Dissipation
1.56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
13.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO130P03SNT
BSO130P03ST
SP000014729

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO130P03S
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO130P03S
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.1
OptiMOS
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• dv /dt rated
• Ideal for fast switching buck converter
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSO130P03S
TM
-P Power-Transistor
Package
P-DSO-8
j
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
130P3S
Marking
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
A
A
A
j,max
A
=11.3 A, R
=11.3 A, V
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
1)
1)
2)
1)
DS
GS
Product Summary
V
R
I
D
=20 V,
=25 Ω
DS
DS(on),max
≤10 secs
-11.3
2.36
-9.1
-55 ... 150
55/150/56
Value
148
±25
-45
P-DSO-8
-6
steady state
1.56
BSO130P03S
-9.2
-7.4
-30
13
-11.3
2006-01-18
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for BSO130P03S

BSO130P03S Summary of contents

Page 1

... D,pulse A =25 Ω =11 =11 = /dt di /dt =-200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSO130P03S - mΩ -11.3 A P-DSO-8 Value Unit ≤10 secs steady state -11.3 -9.2 A -9.1 -7.4 -45 148 mJ -6 kV/µs ±25 V 2.36 1.56 W -55 ... 150 °C 55/150/56 2006-01-18 ...

Page 2

... GS(th) I =-140 µ =- DSS T =25 ° =- =125 ° =- GSS =- DS(on) I =-11 |>2 DS(on)max =-9 (one layer, 70 µm thick) copper area for drain page 2 BSO130P03S Values min. typ. max 110 - - 150 - -1 -10 -100 = -10 -100 - 9.9 13 Unit K/W V µA nA mΩ S 2006-01-18 ...

Page 3

... V =- MHz DS C rss t d(on Ω d(off g(th =- =11 - plateau oss =25 ° S,pulse =-11 =25 ° = =-11.3A /dt =100 A/µ page 3 BSO130P03S Values Unit min. typ. max. - 2650 3520 pF - 708 942 - 580 870 - 105 - -3.7 -5.0 - -21 -32 - -25 -36 - -61 - - -45 - -0.84 -1 2006-01-18 ...

Page 4

... Rev. 1.1 2 Drain current I =f 120 160 4 Max. transient thermal impedance Z =f(t thJS parameter µs 1 µs 100 µ 100 [V] page 4 BSO130P03S |≥ ≤ 120 T [° 100 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 single pulse 0.01 0.00001 0.0001 0.001 0.01 0 [s] p 160 ...

Page 5

... GS 45 -10 V -3 Typ. transfer characteristics I =f |>2 DS(on)max parameter °150 Rev. 1.1 6 Typ. drain-source on resistance R =f(I DS(on) parameter - [V] 8 Typ. forward transconductance g =f ° [V] page 5 BSO130P03S ); T =25 ° 2.5- V 3. [A] D =25 ° [ 3.5- V 4. 2006-01-18 ...

Page 6

... DS Rev. 1.1 10 Typ. gate threshold voltage V =f(T GS(th) 2 1.5 1 0.5 0 100 140 180 12 Forward characteristics of reverse diode I =f parameter: T 100 [V] page 6 BSO130P03S =-140 µ max. typ. min. -60 - 100 T [° 150 °C, typ 150 °C, 98% 25 °C, 98 [V] SD ...

Page 7

... AV 15 Drain-source breakdown voltage =-250 µ BR(DSS -60 - [°C] j Rev. 1.1 14 Typ. gate charge V =f(Q GS gate parameter ° °100 4 C °125 2 0 100 1000 0 16 Gate charge waveforms s(th (th) 100 140 180 page 7 BSO130P03S ); I =-5.5 A pulsed [nC] gate 15 gate 2006-01-18 ...

Page 8

... Package Outline P-DSO-8: Outline Dimensions in mm Rev. 1.1 page 8 BSO130P03S 2006-01-18 ...

Page 9

... Rev. 1.1 page 9 BSO130P03S 2006-01-18 ...

Related keywords