BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 8

• Manufacturer Part Number: BSO130P03S
• Description: MOSFET P-CH 30V 9.2A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO130P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.2V @ 140µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 11.3 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 13.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO130P03SNT; BSO130P03ST; SP000014729

BSO130P03S
Package Outline
P-DSO-8: Outline
Dimensions in mm
Rev. 1.1
page 8
2006-01-18