BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 7

• Manufacturer Part Number: BSO130P03S
• Description: MOSFET P-CH 30V 9.2A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO130P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.2V @ 140µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 11.3 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 13.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO130P03SNT; BSO130P03ST; SP000014729

Rev. 1.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
36
34
32
30
28
26
24
22
20
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
C °125
100
100
C °100
140
C °25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-5.5 A pulsed
g s
20
-Q
Q
gate
g
Q
sw
[nC]
Q
g d
40
BSO130P03S
V 6-
2006-01-18
V 24-
V 15-
Q
gate
60