BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 6

• Manufacturer Part Number: BSO130P03S
• Description: MOSFET P-CH 30V 9.2A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO130P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.2V @ 140µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 11.3 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 13.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO130P03SNT; BSO130P03ST; SP000014729

Rev. 1.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
20
16
12
DS
=f(T
8
4
0
4
3
2
-60
); V
10000
1000
100
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-11.3 A; V
typ.
20
10
-V
Crss
T
GS
Ciss
j
DS
60
[°C]
=-10 V
Coss
98 %
[V]
100
20
140
180
30
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
2.5
1.5
0.5
0.1
10
=f(T
SD
2
1
0
1
-60
)
0
j
); V
j
GS
-20
=V
DS
0.5
20
; I
150 °C, typ
D
=-140 µA
-V
min.
T
max.
typ.
j
SD
60
[°C]
[V]
100
1
150 °C, 98%
BSO130P03S
25 °C, 98%
140
25 °C, typ
2006-01-18
180
1.5