BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 2

• Manufacturer Part Number: BSO130P03S
• Description: MOSFET P-CH 30V 9.2A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO130P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.2V @ 140µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 11.3 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 13.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO130P03SNT; BSO130P03ST; SP000014729

Rev. 1.1
1)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
V
I
V
T
V
T
V
V
I
|V
I
p
p
D
D
D
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
=-140 µA
=-11.3 A
=-9.5 A
=25 °C
=125 °C
DS
page 2
=V
=-30 V, V
=-30 V, V
=0 V, I
=-25 V, V
=-10 V,
|>2|I
2
2
cooling area
cooling area
GS
D
,
|R
D
2
=-250µA
(one layer, 70 µm thick) copper area for drain
DS(on)max
GS
GS
DS
=0 V,
=0 V,
=0 V
1)
1)
,
,
,
min.
-30
14
-1
-
-
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
-10
-10
9.9
27
-
-
-
-
-
-
BSO130P03S
max.
-100
-100
13.0
110
150
-2.2
53
80
35
-1
-
-
2006-01-18
Unit
K/W
V
µA
nA
mΩ
S