BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 7
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BSO130P03S
Manufacturer Part Number
BSO130P03S
Description
MOSFET P-CH 30V 9.2A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO130P03S.pdf
(9 pages)
Specifications of BSO130P03S
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 11.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
2.2V @ 140µA
Gate Charge (qg) @ Vgs
81nC @ 10V
Input Capacitance (ciss) @ Vds
3520pF @ 25V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
13 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 11.3 A
Power Dissipation
1.56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
13.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO130P03SNT
BSO130P03ST
SP000014729
BSO130P03ST
SP000014729
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSO130P03S
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO130P03S
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
36
34
32
30
28
26
24
22
20
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
C °125
100
100
C °100
140
C °25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-5.5 A pulsed
g s
20
-Q
Q
gate
g
Q
sw
[nC]
Q
g d
40
BSO130P03S
V 6-
2006-01-18
V 24-
V 15-
Q
gate
60