TPCF8B01(TE85L) Toshiba, TPCF8B01(TE85L) Datasheet - Page 4

• Manufacturer Part Number: TPCF8B01(TE85L)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8B01(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8B01(TE84L); TPCF8B01TR

MOSFET
100
−5
−4
−3
−2
−1
−5
−4
−3
−2
−1
10
−0.1
0
1
0
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−4.5
−0.2
−0.5
Drain-source voltage
Gate-source voltage
−5
−4
Drain current I D (A)
Ta = 100°C
−0.4
−1.0
Ta = 25°C
Ta = 25°C
I
I
|Y
D
D
fs
– V
– V
−3.5
−1
| – I
−3
DS
GS
−0.6
−1.5
D
−2.8
Ta = 100°C
Ta = −55°C
−2.5
V GS (V)
V DS
Ta = −55°C
Common source
Ta = 25°C
Pulse test
V GS = −1.5 V
−0.8
−2.0
(V)
−1.8
−2
−1.0
−2.5
−10
4
1000
−1.0
−0.8
−0.6
−0.4
−0.2
−10
100
−8
−6
−4
−2
10
−0.1
0
0
0
0
−4.5
Common source
Ta = 25°C
Pulse test
−5
−0.7 A
Drain-source voltage
−1
Gate-source voltage V GS (V)
−2
−3.5
−4
Drain current I D (A)
−2.8
−3
R DS (ON)
−2
V
I
DS
D
– V
−4
−1
– V
DS
GS
– I
−3
−1.8 V
D
V DS (V)
V GS = −4.5 V
Common source
Ta = 25°C
Pulse test
−1.4 A
Common source
Ta = 25°C
Pulse test
−6
V GS = −1.5 V
I D = −2.7 A
−4
TPCF8B01
−2.5 V
2006-11-16
−2.5
−1.8
−2
−10
−5
−8