TPCF8B01(TE85L) Toshiba, TPCF8B01(TE85L) Datasheet - Page 6

• Manufacturer Part Number: TPCF8B01(TE85L)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8B01(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8B01(TE84L); TPCF8B01TR

100
0.1
10
1
0.1
I D max (pulse)*
※ Single pulse
Curves must be derated linearly with
increase in temperature.
Ta=25℃
Drain-source voltage V DS (V)
1000
100
Safe operating area
10
1
1 m
1
10 ms*
Single pulse
10 m
10
1 ms*
V DSS max
100 m
100
Pulse width t w (s)
r
th
6
– t
1
w
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
10
(4)
100
(3)
(1)
(2)
1000
TPCF8B01
2006-11-16