TPCF8B01(TE85L) Toshiba, TPCF8B01(TE85L) Datasheet - Page 7

• Manufacturer Part Number: TPCF8B01(TE85L)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8B01(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8B01(TE84L); TPCF8B01TR

SBD
160
140
120
100
0.01
0.1
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
0.0
0.0
1
Tj=150℃
α=60°
125℃
75℃
0.2
0.2
Surge forward current (non-repetitive)
Average forward current I F (AV) (A)
Device mounted on a glass-epoxy board(a) (Note 2a)
Instantaneous forward voltage v F (V)
0.4
120°
0.4
Ta max – I
25℃
Number of cycles
0.6
0.6
i
F
0.8
10
– v
180°
F (AV)
0.8
F
1.0
Rectangular waveform
Single-device operation (Note 3a)
0° α
Conduction angle:α
V
R
1.0
=15V
1.2
360°
1.2
1.4
Ta=25℃
f=50Hz
DC
I
F(AV)
I
1.6
1.4
100
7
1000
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
100
100
10
10
0.0
1 m
1
1
0.2
10 m
Average forward current I F (AV) (A)
0.4
Reverse voltage V R (V)
α =60°
100
P
Pulse width t w (s)
0.6
F (AV)
C
j
r
– V
120°
th
0.8
Device mounted on a glass-epoxy board(a)(Note 2a)
(1)Single-device operation(Note 3a)
(2)Single-device value at dual operation(Note 3b)
Device mounted on a glass-epoxy board(b)(Note 2b)
(3)Single-device operation(Note 3a)
(4)Single-device value at dual operation(Note 3b)
– I
– t
10
1
R
F (AV)
w
1.0
180°
10
(4)
TPCF8B01
1.2
Conduction angle: α
0° α
2006-11-16
Rectangular
waveform
(typ.)
100
1.4
360°
f=1MHz
Ta=25℃
(3)
DC
(1)
(2)
1.6
100
1000