TPCF8B01(TE85L) Toshiba, TPCF8B01(TE85L) Datasheet - Page 5

• Manufacturer Part Number: TPCF8B01(TE85L)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8B01(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8B01(TE84L); TPCF8B01TR

10000
1000
300
250
200
150
100
100
1.6
1.2
0.8
0.4
50
10
−0.1
0
−80
2
0
0
t = 5 s
−2.5 V
−4.5 V
Common source
Pulse test
(1)
(2)
(3)
(4)
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = −1.8 V
−40
Drain-source voltage V DS (V)
Ambient Temperature Ta (°C)
Ambient temperature Ta (°C)
40
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
ｔ＝5S
Capacitance – V
−1
0
R
DS (ON)
I D = −0.7, −1.4, −2.7 A
P
D
40
80
– Ta
I D = −1.4 A
I D = −2.7 A
– Ta
−10
80
DS
120
C oss
C rss
C iss
I D = −1.4 A
120
−0.7 A
−0.7 A
−100
160
160
5
−100
−2.0
−1.5
−1.0
−0.5
−0.0
−10
−20
−16
−12
−1
−8
−4
−80
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −200 µA
Pulse test
−2.5
V DS
−40
0.4
Drain-source voltage
−2
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
−1.8
Dynamic input/output
−4.5
0
−1
characteristics
0.8
−4
I
DR
V
th
V GS = 0 V
– V
40
– Ta
DS
1.2
−6
V DS (V)
V GS
80
−4 V
Common source
I D = −2.7 A
Ta = 25°C
Pulse test
TPCF8B01
V DD = −16 V
1.6
−8
120
2006-11-16
−8 V
160
−10
2.0
−10
−8
−6
−4
−2
0