SPB80N06S2L-11 Infineon Technologies, SPB80N06S2L-11 Datasheet - Page 2

• Manufacturer Part Number: SPB80N06S2L-11
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-11

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 93µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013586; SPB80N06S2L11T

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=93µA
=0V, I
=55V, V
=55V, V
=20V, V
=4.5V, I
=10V, I
2
cooling area
D
D
=1mA
GS
GS
DS
D
=40A
=40A
=0V, T
=0V, T
=0V
j
j
3)
=25°C
=125°C
GS
= V
DS
j
thJC
= 25 °C, unless otherwise specified
= 0.95K/W the chip is able to carry I
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
SPP80N06S2L-11,SPB80N06S2L-11
min.
min.
1.2
55
-
-
-
-
-
-
-
-
-
D
= 83A at 25°C, for detailed
Values
Values
0.01
10.6
0.63
typ.
typ.
1.6
8.3
1
1
-
-
-
-
SPI80N06S2L-11
max.
max.
14.7
100
0.95
100
11
62
62
40
2004-11-02
2
1
-
Unit
V
µA
nA
m
Unit
K/W