SPB80N06S2L-11 Infineon Technologies, SPB80N06S2L-11 Datasheet - Page 3

• Manufacturer Part Number: SPB80N06S2L-11
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-11

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 93µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013586; SPB80N06S2L11T

Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
I
V
t
Q
g
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
S
SM
rr
d(on)
r
d(off)
f
fs
SD
rr
iss
oss
rss
gs
gd
g
(plateau) V
Page 3
T
V
V
di
V
I
V
f=1MHz
V
I
R
V
V
V
D
D
C
GS
R
F
DS
GS
DD
G
DD
DD
GS
DD
=58A
=80A,
=25°C
/dt=100A/µs
=30V, I
=3
=0V, I
=0V, V
=0 to 10V
=30V, V
=44V, I
=44V, I
=44V, I
Conditions
2*I
D
*R
F =
F
SPP80N06S2L-11,SPB80N06S2L-11
DS
=80A
D
D
D
DS(on)max
l
GS
S
=80A
=80A,
=80A
=25V,
,
=10V,
,
min.
38
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1990
SPI80N06S2L-11
typ.
466
133
8.4
3.6
76
19
45
18
20
60
54
61
1
7
-
-
2004-11-02
max.
2650 pF
620
200
320
1.3
13
29
68
27
30
80
80
67
76
9
-
-
Unit
S
ns
nC
V
A
V
ns
nC