SPB80N06S2L-11 Infineon Technologies, SPB80N06S2L-11 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2L-11
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-11

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 93µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2650pF @ 25V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013586; SPB80N06S2L11T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2L-11
GS
P
0.5
tot
); T
); V
= 158W
i
p
p
2
= 80 µs
= 80 µs
1
j
=25°C
DS
1.5
2 x I
4
2
D
2.5
x R
6
DS(on)max
3
3.5
g
e
c
a
8
h
f
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
4
V
V
V
V
DS
GS
10.0
2.4
2.8
3.0
3.3
3.5
3.8
4.0
4.5
11
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
S
36
28
24
20
16
12
90
70
60
50
40
30
20
10
SPP80N06S2L-11,SPB80N06S2L-11
8
4
0
0
0
0
D
SPP80N06S2L-11
= f (I
V
); T
c
GS
3.0
c
[V] =
20
10
j
3.3
d
=25°C
D
fs
GS
)
d
3.5
e
40
20
3.8
f
e
60
30
g
4.0
f
4.5
80
h
40
SPI80N06S2L-11
10.0
i
100
g
50
2004-11-02
120
60
A
A
h
I
i
D
I
D
160
80