BSS84PW Infineon Technologies, BSS84PW Datasheet - Page 2

• Manufacturer Part Number: BSS84PW
• Description: MOSFET P-CH 60V 150MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84PW

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19.1pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84PW; BSS84PWINTR; BSS84PWXT

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Rev 1.3
D
GS
DS
DS
GS
GS
GS
GS
= -20 µA
= -60 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -2.7 V, I
= -4.5 V, I
= -10 V, I
2
cooling area
D
= -250 µA
D
D
D
GS
GS
DS
= -0.15 A
= -0.01 A
= -0.12 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 125 °C
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
DS(on)
thJS
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
-
Values
Values
10.5
typ.
typ.
-1.5
-0.1
-10
6.9
4.6
-10
-
-
-
-
max.
max.
-100
-100
110
420
350
BSS84PW
25
12
-2
-1
2006-12-05
8
-
Unit
V
µA
nA
W
Unit
K/W