BSS84PW Infineon Technologies, BSS84PW Datasheet - Page 5

• Manufacturer Part Number: BSS84PW
• Description: MOSFET P-CH 60V 150MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84PW

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19.1pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84PW; BSS84PWINTR; BSS84PWXT

Typ. output characteristic
I
parameter: t
Typ. transfer characteristics I
V
parameter: t
D
DS
= f ( V
-0.36
-0.28
-0.24
-0.20
-0.16
-0.12
-0.08
-0.04
-0.30
-0.20
-0.15
-0.10
-0.05
0.00
0.00
³
A
A
Rev 1.3
2 x I
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
BSS84PW
DS
P
tot
D
); T
= 0W
p
x R
p
= 80 µs
= 80 µs
j
g
=25°C
DS(on)max
f
e
D
c
a
= f ( V
d
b
V GS [V]
a
b
c
d
e
f
g
V
V
V
V
DS
GS
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
GS
-5.0
-5.0
Page 5
)
Typ. drain-source-on-resistance
R
parameter: V
Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f( I
0.22
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
W
S
26
22
20
18
16
14
12
10
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
8
6
4
2
0
D
BSS84PW
V
= f ( I
a
-2.5
); T
GS
a
[V] =
-3.0
b
j
=25°C
D
fs
GS
)
-3.5
c
b
-4.0
d
-4.5
e
-5.0
f
c
-6.0
g
BSS84PW
2006-12-05
d
A
g
I
A
D
I
e
D
f
-0.30
-0.40