BSS84PW Infineon Technologies, BSS84PW Datasheet - Page 3

• Manufacturer Part Number: BSS84PW
• Description: MOSFET P-CH 60V 150MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84PW

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19.1pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84PW; BSS84PWINTR; BSS84PWXT

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 1.3
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
V
I
V
f =1MHz
V
I
V
V
V
T
V
V
d i
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
A
GS
R
F
=0.15A
=-0.12A, R
=25°C
=-30V, I
/d t =100A/µs
£
=0V, V
=-30V, V
=-48V, I
=-48V, I
=0 to -10V
=-48V, I
=0V, I
Conditions
2* I
D
* R
F
F =
DS
=-0.15A
DS(on)max
D
D
D
G
GS
l
=-0.15A
=-0.15A,
=-0.15A
=-25V,
S
=25
,
=-4.5V,
W
,
min.
0.08
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.84
0.16
15.3
16.2
20.5
0.25
23.6
11.6
typ.
-3.4
5.8
6.7
8.6
0.3
3
1
-
-
BSS84PW
2006-12-05
max.
-0.15 A
-1.12 V
19.1
24.3
12.9
30.8
0.38
0.45
35.4
17.4
-0.6
7.3
3.8
1.5
10
-
-
Unit
S
pF
ns
nC
V
ns
nC