BSS84PW Infineon Technologies, BSS84PW Datasheet - Page 6

• Manufacturer Part Number: BSS84PW
• Description: MOSFET P-CH 60V 150MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84PW

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19.1pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84PW; BSS84PWINTR; BSS84PWXT

Drain-source on-resistance
R
parameter: I
Typ. capacitances
C = f(V
Parameter: V
DS(on)
Rev 1.3
pF
10
10
10
W
16
12
10
8
6
4
2
0
-60
2
1
0
0
DS
= f( T j )
)
D
-5
-20
GS
= -0.17A, V
=0 V, f =1 MHz
-10
max.
20
-15
C
C
C
oss
rss
iss
60
GS
= -10 V
-20
100
typ.
V
°C
T
V
j
DS
160
-30
Page 6
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-2.5
-1.5
-1.0
-0.5
0.0
V
A
-1
-2
-3
-60
0.0
0
= f ( T j )
SD
BSS84PW
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
DS
-1.2
T
T
T
T
j
j
j
j
, I
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
60
D
-1.6
typ.
min.
max.
= -20 µA
-2.0
100
BSS84PW
2006-12-05
-2.4
°C
V
V
T
SD
j
-3.0
180