BLF3G21-6,135 NXP Semiconductors, BLF3G21-6,135 Datasheet - Page 4

• Manufacturer Part Number: BLF3G21-6,135
• Description: TRANSISTOR UHF PWR LDMOS SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6,135

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 2.3A
• Current - Test: 90mA
• Voltage - Test: 26V
• Power - Output: 6W
• Package / Case: SOT-538A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058477135

NXP Semiconductors
BLF3G21-6_1
Product data sheet
Fig 1.
Fig 3.
(dB)
(dB)
G
G
p
p
15
13
11
18
16
14
12
10
9
7
5
8
6
10
10
V
Power gain as a function of CW load power;
typical values
V
f
Two-tone power gain and drain efficiency as
function of peak envelope load power;
typical values
2
DS
DS
2
1
= 2000.1 MHz.
= 26 V; I
= 26 V; I
7.1 Ruggedness in class-AB operation
Dq
Dq
10
= 90 mA; T
= 90 mA; T
The BLF3G21-6 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
f = 2200 MHz at rated load power.
1
1
G
D
h
h
p
= 25 C; f = 2000 MHz.
P
1
25 C; f
L(PEP)
P
L(CW)
(W)
001aai224
001aai226
1
= 2000 MHz;
(W)
10
10
Rev. 01 — 25 June 2008
60
50
40
30
20
10
0
(%)
D
Fig 2.
Fig 4.
(dBc)
IMD
(%)
d
50
40
30
20
10
20
40
60
80
0
0
10
10
V
Drain efficiency as a function of
CW load power; typical values
V
f
Two-tone intermodulation distortion as a
function of peak envelope load power;
typical values
2
2
DS
1
DS
= 2000.1 MHz.
= 26 V; I
= 26 V; I
Dq
Dq
10
= 90 mA; T
= 90 mA; T
1
UHF power LDMOS transistor
IMD3
IMD5
IMD7
1
h
h
BLF3G21-6
= 25 C; f = 2000 MHz.
P
1
25 C; f
DS
L(PEP)
P
= 26 V;
L(CW)
© NXP B.V. 2008. All rights reserved.
(W)
001aai225
001aai227
1
= 2000 MHz;
(W)
10
10
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