BT169D-L,112 NXP Semiconductors, BT169D-L,112 Datasheet - Page 10

• Manufacturer Part Number: BT169D-L,112
• Description: THYRISTOR 400V 50MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT169D-L,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 50µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 2 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061523112

NXP Semiconductors
9. Revision history
Table 6.
BT169D-L_2
Product data sheet
Document ID
BT169D-L_2
Modifications:
BT169D-L_1
Revision history
Release date
20080226
20071112
•
•
•
•
Section 1.2 “Features” on page
Section 1.4 “Quick reference data” on page
Table 3 “Limiting values” on page
Table 5 “Characteristics” on page
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 26 February 2008
1: updated.
2: table note 1 removed.
6: conditions I
1: condition I
GT
, I
L
Change notice
-
-
, I
H
TSM
and V
updated.
GT
updated.
Thyristor logic level
BT169D-L
© NXP B.V. 2008. All rights reserved.
Supersedes
BT169D-L_1
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