BT169D-L,112 NXP Semiconductors, BT169D-L,112 Datasheet - Page 3

• Manufacturer Part Number: BT169D-L,112
• Description: THYRISTOR 400V 50MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT169D-L,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 50µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 2 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061523112

NXP Semiconductors
BT169D-L_2
Product data sheet
Fig 1.
Fig 2.
I
P
(W)
TSM
(A)
tot
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
0
1
Form factor a = I
Total power dissipation as a function of average on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
T(RMS)
0.1
/ I
T(AV)
4
0.2
10
Rev. 02 — 26 February 2008
2.8
0.3
2.2
10
0.4
2
conduction
(degrees)
1.9
angle
120
180
30
60
90
number of cycles
factor
form
1.57
2.8
2.2
1.9
a
4
0.5
I
T
T
j(init)
a =
1.57
Thyristor logic level
BT169D-L
I
t
p
T(AV)
= 25 C max
© NXP B.V. 2008. All rights reserved.
001aab446
001aab499
(A)
I
TSM
t
10
0.6
3
77
89
101
113
125
T
( C)
lead(max)
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