BT169D-L,112 NXP Semiconductors, BT169D-L,112 Datasheet

THYRISTOR 400V 50MA TO-92

BT169D-L,112

Manufacturer Part Number
BT169D-L,112
Description
THYRISTOR 400V 50MA TO-92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT169D-L,112

Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
50µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A, 9A
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Rated Repetitive Off-state Voltage Vdrm
400 V
Breakover Current Ibo Max
9 A
On-state Rms Current (it Rms)
0.8 A
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
Gate Trigger Voltage (vgt)
0.3 V
Gate Trigger Current (igt)
50 uA
Holding Current (ih Max)
2 mA
Forward Voltage Drop
1.25 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
400 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061523112
1. Product profile
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
anode (A)
gate (G)
cathode (K)
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Passivated sensitive gate thyristor in a SOT54 plastic package.
I
I
I
I
I
I
BT169D-L
Thyristor logic level
Rev. 02 — 26 February 2008
Very sensitive gate
Direct interfacing to low power gate drive
circuits
General purpose switching and phase control
V
V
I
TSM
DRM
RRM
8 A (t = 10 ms)
400 V
400 V
Simplified outline
SOT54 (TO-92)
I
I
I
I
Direct interfacing to logic level ICs
I
I
I
3
T(RMS)
T(AV)
GT
2
1
50 A
0.5 A
0.8 A
Product data sheet
Graphic symbol
A
sym037
G
K

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BT169D-L,112 Summary of contents

Page 1

... BT169D-L Thyristor logic level Rev. 02 — 26 February 2008 1. Product profile 1.1 General description Passivated sensitive gate thyristor in a SOT54 plastic package. 1.2 Features I Very sensitive gate I Direct interfacing to low power gate drive circuits 1.3 Applications I General purpose switching and phase control 1 ...

Page 2

... T lead see Figure 1 all conduction angles; see and 5 half sine wave prior to j surge; see Figure 2 and 8 mA /dt = 100 mA over any 20 ms period Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level Min Max - 400 - 400 0.5 Figure ...

Page 3

... Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT169D-L_2 Product data sheet 2.2 2.8 4 0.2 0.3 10 Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level 001aab446 a = 1.57 1.9 conduction form angle factor (degrees 2.8 90 2.2 120 1 ...

Page 4

... Hz lead Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents BT169D-L_2 Product data sheet 4 10 001aab449 I T(RMS) (A) 0.8 0.6 0.4 0 surge duration (s) (1) T Fig 5. Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level max j(init ( ( 100 lead RMS on-state current as a function of lead temperature ...

Page 5

... Z th(j-lead) (K/ Fig 6. Transient thermal impedance from junction to lead as a function of pulse width BT169D-L_2 Product data sheet Conditions see Figure 6 printed-circuit board mounted; lead length = Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level Min Typ Max - - 60 - 150 - 001aab451 (s) p © NXP B.V. 2008. All rights reserved. ...

Page 6

... 125 C; DM DRM(max) j exponential waveform; see Figure gate open circuit mA DRM(max / 125 C; DM DRM(max 1 (dI /dt / Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level Min Typ Max Unit - - 1.25 1 0.5 0.8 V 0.2 0 0.05 0.1 mA 500 800 - 100 - s © NXP B.V. 2008. All rights reserved. ...

Page 7

... Product data sheet 001aab501 GT(25 C) 100 150 Fig 8. 001aab454 L( 2.8 V (V) T Fig 10. Normalized latching current as a function of Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level 100 Normalized gate trigger current as a function of junction temperature 100 junction temperature © NXP B.V. 2008. All rights reserved. ...

Page 8

... Product data sheet 001aab504 / 100 150 (1) R (2) Gate open circuit Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level 001aab507 (1) (2) 50 100 © NXP B.V. 2008. All rights reserved. 150 ...

Page 9

... 4.8 1.7 4.2 14.5 2.54 1.27 4.4 1.4 3.6 12.7 REFERENCES JEDEC JEITA TO-92 SC-43A Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level ( max. 2.5 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2008. All rights reserved. SOT54 04-06-28 04-11- ...

Page 10

... Product data sheet Data sheet status Product data sheet 1: updated. 1: condition I 2: table note 1 removed. 6: conditions Product data sheet Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level Change notice Supersedes - BT169D-L_1 updated. TSM , I and V updated © NXP B.V. 2008. All rights reserved ...

Page 11

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 26 February 2008 BT169D-L Thyristor logic level © NXP B.V. 2008. All rights reserved ...

Page 12

... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT169D-L Thyristor logic level All rights reserved. Date of release: 26 February 2008 Document identifier: BT169D-L_2 ...

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