BT169D-L,112 NXP Semiconductors, BT169D-L,112 Datasheet - Page 4

• Manufacturer Part Number: BT169D-L,112
• Description: THYRISTOR 400V 50MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT169D-L,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 50µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 2 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061523112

NXP Semiconductors
BT169D-L_2
Product data sheet
Fig 3.
Fig 4.
I
T(RMS)
I
TSM
(A)
(A)
10
10
1.5
0.5
10
1
2
1
0
3
2
10
10
t
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values
f = 50 Hz; T
RMS on-state current as a function of surge
duration for sinusoidal currents
p
5
2
10 ms
lead
10
1
83 C
1
surge duration (s)
10
001aab449
4
Rev. 02 — 26 February 2008
10
Fig 5.
I
T(RMS)
(A)
(1) T
0.8
0.6
0.4
0.2
1
0
50
RMS on-state current as a function of lead
temperature; maximum values
lead
= 83 C
10
3
0
50
I
T
t
T
p
j(init)
(s)
t
p
= 25 C max
(1)
Thyristor logic level
BT169D-L
100
© NXP B.V. 2008. All rights reserved.
T
I
lead
001aab497
001aab450
TSM
t
( C)
10
150
2
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