MJD122T4 STMicroelectronics, MJD122T4 Datasheet - Page 6

• Manufacturer Part Number: MJD122T4
• Description: TRANS DARL NPN 100V 5A DPAK
• Manufacturer: STMicroelectronics
• Type: Amplifier, Powerr

Specifications of MJD122T4

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 80mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 4A, 4V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 5 A
• Maximum Collector Cut-off Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Current, Gain: 100
• Current, Input: 0.12 A
• Current, Output: 8 A
• Package Type: TO-252
• Polarity: NPN
• Power Dissipation: 20 W
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Input: 5 V
• Voltage, Output: 100 V
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Base-emitter Saturation Voltage (max): 4.5V
• Collector-emitter Saturation Voltage: 2V
• Collector Current (dc) (max): 16A
• Dc Current Gain: 100
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2469-2

Electrical characteristics
6/12
Figure 8.
Figure 10. Base-emitter on voltage for NPN
Figure 12. Resistive load switching times for
V
V
BE(sat)
(V)
BE(on)
(V)
t(ns)
2.0
1.5
1.0
0.5
100
2.0
1.5
1.0
0.5
10
0.1
0.1
Base-emitter saturation voltage for
NPN type
type
NPN type (on)
0
h
V
FE
CE
V cc = 30 V
h FE =250
Vbeoff= - 5 V
Ibon= - Iboff
= 250
= 3 V
1
2
3
1
1
4
Delay time
Rise time
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
5
I c (A)
I c (A)
I c (A)
AM00700v1
AM03262v1
AM03264v1
Doc ID 3541 Rev 11
Figure 9.
Figure 11. Base-emitter on voltage for PNP
Figure 13. Resistive load switching times for
V
BE(sat)
V
(V)
BE(on)
(V)
-2.0
-1.5
-1.0
-0.5
t(ns)
-2.0
-1.5
-0.5
-1.0
100
10
-0.1
- 0.1
Base-emitter saturation voltage for
PNP type
type
PNP type (on)
0
h
V
FE
V cc = -30 V
h FE =250
Vbeoff= 5 V
-Ibon= Iboff
CE
= 250
-1
= -3 V
-2
-3
-1
-1
-4
Delay time
Rise time
MJD122, MJD127
T j = -40 °C
T j = 25 °C
T j =125 °C
T j = -40 °C
T j = 25 °C
T j =125 °C
-5
I c (A)
I c (A)
I c (A)
AM03261v1
AM03263v1
AM03265v1