PBSS305NX,115 NXP Semiconductors, PBSS305NX,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS305NX,115
• Description: TRANS NPN 80V 4.6A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS305NX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 4.6A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 240mV @ 230mA, 4.6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 110 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4177-2; 934059012115; PBSS305NX T/R; PBSS305NX T/R

NXP Semiconductors
5. Limiting values
PBSS305NX_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
C
CM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 8 December 2009
P
(W)
tot
2
2.5
2.0
1.5
1.0
0.5
O
0
3
−75
, standard footprint
(1)
(2)
(3)
−25
2
O
3
, standard footprint.
25
Conditions
open emitter
open base
open collector
single pulse;
t
T
80 V, 4.6 A NPN low V
2
p
amb
≤ 1 ms
75
≤ 25 °C
125
T
006aaa556
amb
(°C)
[1]
[2]
[3]
175
PBSS305NX
Min
-
-
-
-
-
-
-
-
-
−65
−65
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
80
80
5
4.6
9.2
0.6
1.65
2.1
150
+150
+150
Unit
V
V
V
A
A
W
W
W
°C
°C
°C
2
.
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