PBSS305NX,115 NXP Semiconductors, PBSS305NX,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS305NX,115
• Description: TRANS NPN 80V 4.6A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS305NX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 4.6A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 240mV @ 230mA, 4.6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 110 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4177-2; 934059012115; PBSS305NX T/R; PBSS305NX T/R

NXP Semiconductors
6. Thermal characteristics
PBSS305NX_2
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0.75
0.33
10
−4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
−3
Thermal characteristics
10
Rev. 02 — 8 December 2009
−2
10
−1
2
Conditions
in free air
O
3
, standard footprint.
80 V, 4.6 A NPN low V
1
[1]
[2]
[3]
10
Min
-
-
-
-
PBSS305NX
CEsat
Typ
-
-
-
-
10
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
006aaa557
(s)
Max
208
76
60
20
10
3
Unit
K/W
K/W
K/W
K/W
2
.
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