PBSS305NX,115 NXP Semiconductors, PBSS305NX,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS305NX,115
• Description: TRANS NPN 80V 4.6A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS305NX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 4.6A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 240mV @ 230mA, 4.6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 110 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4177-2; 934059012115; PBSS305NX T/R; PBSS305NX T/R

NXP Semiconductors
7. Characteristics
PBSS305NX_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 8 December 2009
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 4.6 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= −0.15 A
= 5 V; I
= 80 V; I
= 80 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
B
B
B
B
B
B
B
B
B
B
80 V, 4.6 A NPN low V
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 80 mA
= 200 mA
= 80 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 230 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 5 A
= 2 A
= 0 A
= 0 A;
= i
= 100 mA;
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
250
180
90
70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS305NX
CEsat
Typ
-
-
-
470
420
280
140
110
25
50
85
105
150
140
210
170
38
53
0.82
0.94
0.77
15
200
215
310
245
555
110
30
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
100
50
100
-
-
-
-
-
40
70
120
140
210
200
320
240
53
80
0.9
1.05
0.85
-
-
-
-
-
-
-
50
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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